ST p21nm60nd f21nm60nd b21nm60nd i21nm60nd w21nm60nd free download

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STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600 V, 0.17 17 A FDmeshTM II Power MOSFET , D 2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 1 2 STB21NM60ND 650 V < 0.22 17 A 1 1 2 TO-220 D2PAK STI21NM60ND 650 V < 0.22 17 A TO-220FP STF21NM60ND 650 V < 0.22 17 A(1) STP21NM60ND 650 V < 0.22 17 A STW21NM60ND 650 V < 0.22 17 A 1. Limited only by maximum temperature allowed 3 12 3 2 The worldwide best RDS(on)*area amongst the 1 I2PAK TO-247 fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Extremely high dv/dt and avalanche capabilities Application Switching applications Description The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode. It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB21NM60ND 21NM60ND D